In_xGa_{1-x}Sb MOSFET: Performance Analysis by Self Consistent CV Characterization and Direct Tunneling Gate Leakage Current

摘要

In this paper, Capacitance-Voltage (C-V) characteristics and direct tunneling(DT) gate leakage current of antimonide based surface channel MOSFET wereinvestigated. Self-consistent method was applied by solving coupledSchr\"odinger-Poisson equation taking wave function penetration and straineffects into account. Experimental I-V and gate leakage characteristic forp-channel InxGa1-xSb MOSFETs are available in recent literature. However, aself- consistent simulation of C-V characterization and direct tunneling gateleakage current is yet to be done for both n- channel and p-channel InxGa1-xSbsurface channel MOSFETs. We studied the variation of C-V characteristics andgate leakage current with some important process parameters like oxidethickness, channel composition, channel thickness and temperature for n-channelMOSFET in this work. Device performance should improve as compressive strainincreases in channel. Our simulation results validate this phenomenon asballistic current increases and gate leakage current decreases with theincrease in compressive strain. We also compared the device performance byreplacing InxGa1-xSb with InxGa1-xAs in channel of the structure. Simulationresults show that performance is much better with this replacement.